Properties and stability of a-Si:H films by alternately repeating deposition and hydrogen plasma treatment

Author

Ashida, Y. ; Koyama, M. ; Miyachi, K. ; Tanaka, H. ; Fukuda, N. ; Nitta, A.

Author_Institution

Mitsui Toatsu Chem. Inc., Yokohama, Japan

fYear

1991

fDate

7-11 Oct 1991

Firstpage

1352

Abstract

The novel deposition method of alternately repeating deposition and hydrogen plasma treatment was investigated to obtain high-quality, stable a-Si:H films. It was found that the film properties were strongly dependent on the thickness deposited in each repeating cycle. The optical bandgap and hydrogen content were controlled by changing the thickness in the each repeating cycle. The light soak degradation of these films was smaller than that of the conventional films

Keywords

amorphous semiconductors; elemental semiconductors; energy gap; hydrogen; optical constants; plasma deposition; semiconductor doping; semiconductor growth; semiconductor thin films; silicon; Si:H; amorphous semiconductor thin films; deposition; hydrogen content; hydrogen plasma treatment; light soak degradation; optical bandgap; quality; stability; thickness; Degradation; Glow discharges; Hydrogen; Optical films; Optical scattering; Photonic band gap; Photovoltaic cells; Plasma chemistry; Plasma properties; Plasma stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE

Conference_Location

Las Vegas, NV

Print_ISBN

0-87942-636-5

Type

conf

DOI

10.1109/PVSC.1991.169428

Filename

169428