Radiation and temperature effects in heteroepitaxial and homoepitaxial InP cells

Author

Weinberg, I. ; Curtis, H.B. ; Swartz, C.K. ; Brinker, D.J. ; Jenkins, P.P. ; Faur, M.

Author_Institution

NASA Lewis Res. Center, Cleveland, OH, USA

fYear

1991

fDate

7-11 Oct 1991

Firstpage

1445

Abstract

Heteroepitaxial (InP/GaAs) and homoepitaxial (InP/InP) solar cells were irradiated by 1 MeV electrons and their performance, temperature dependencies and carrier removal rates determined. The radiation resistances of the InP/GaAs cells were significantly higher than that of the InP/InP cells. This was attributed to the high dislocation density present in the heteroepitaxial cells. In addition, the effects of dislocations in these latter cells were dominant in determining the temperature dependence of the open-circuit voltage

Keywords

III-V semiconductors; indium compounds; radiation effects; semiconductor device testing; solar cells; thermal analysis; 1 MeV; InP-GaAs; InP-InP; carrier removal rates; dislocation density; heteroepitaxial; homoepitaxial; open-circuit voltage; performance; radiation effects; radiation resistances; semiconductor device testing; solar cells; temperature effects; Degradation; Density measurement; Electrons; Etching; Gallium arsenide; Indium phosphide; Protons; Substrates; Temperature dependence; Xenon;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE

Conference_Location

Las Vegas, NV

Print_ISBN

0-87942-636-5

Type

conf

DOI

10.1109/PVSC.1991.169444

Filename

169444