DocumentCode
2562691
Title
Direct cover glass bonding to GaAs and GaAs/Ge solar cells
Author
Nowlan, M.J. ; Tobin, S.P. ; Darkazalli, G.
Author_Institution
Spire Corp., Bedford, MA, USA
fYear
1991
fDate
7-11 Oct 1991
Firstpage
1480
Abstract
Electrostatic bonding is being developed as a technique for attaching cover glasses directly to GaAs and GaAs/Ge solar cells. This process eliminates the elastometric adhesive used in conventional cell assemblies, thereby increasing the thermal stability and radiation tolerance of the assemblies. Cover glasses have been electrostatically bonded to GaAs solar cells with minimal (2%) degradation in conversion efficiency. Bonded cells have survived thermal cycling between -180°C and +150°C without degradation. Glass has also been bonded to AR-coated GaAs/Ge wafers. The wafers were then selectively etched to remove the Ge substrate, leaving only the epitaxial GaAs film attached to the glass. This approach may lead to very lightweight high-efficiency thin-film solar cells
Keywords
III-V semiconductors; electrostatics; elemental semiconductors; gallium arsenide; germanium; joining processes; solar cells; GaAs solar cells; GaAs-Ge solar cells; antireflection coated GaAs/Ge wafers; cover glass bonding; electrostatic bonding; radiation tolerance; thermal stability; Assembly; Electrostatics; Etching; Gallium arsenide; Glass; Joining processes; Photovoltaic cells; Thermal degradation; Thermal stability; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location
Las Vegas, NV
Print_ISBN
0-87942-636-5
Type
conf
DOI
10.1109/PVSC.1991.169450
Filename
169450
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