• DocumentCode
    2562691
  • Title

    Direct cover glass bonding to GaAs and GaAs/Ge solar cells

  • Author

    Nowlan, M.J. ; Tobin, S.P. ; Darkazalli, G.

  • Author_Institution
    Spire Corp., Bedford, MA, USA
  • fYear
    1991
  • fDate
    7-11 Oct 1991
  • Firstpage
    1480
  • Abstract
    Electrostatic bonding is being developed as a technique for attaching cover glasses directly to GaAs and GaAs/Ge solar cells. This process eliminates the elastometric adhesive used in conventional cell assemblies, thereby increasing the thermal stability and radiation tolerance of the assemblies. Cover glasses have been electrostatically bonded to GaAs solar cells with minimal (2%) degradation in conversion efficiency. Bonded cells have survived thermal cycling between -180°C and +150°C without degradation. Glass has also been bonded to AR-coated GaAs/Ge wafers. The wafers were then selectively etched to remove the Ge substrate, leaving only the epitaxial GaAs film attached to the glass. This approach may lead to very lightweight high-efficiency thin-film solar cells
  • Keywords
    III-V semiconductors; electrostatics; elemental semiconductors; gallium arsenide; germanium; joining processes; solar cells; GaAs solar cells; GaAs-Ge solar cells; antireflection coated GaAs/Ge wafers; cover glass bonding; electrostatic bonding; radiation tolerance; thermal stability; Assembly; Electrostatics; Etching; Gallium arsenide; Glass; Joining processes; Photovoltaic cells; Thermal degradation; Thermal stability; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-87942-636-5
  • Type

    conf

  • DOI
    10.1109/PVSC.1991.169450
  • Filename
    169450