Grain growth and characteristics of chlorine doped thick polycrystalline CdZnTe films

Author

Yoshimatsu, Akina ; Yoshimuta, Toshinori ; Tokuda, Satoshi ; Kishihara, Hiroyuki ; Kaino, Masatomo ; Doki, Takahiro ; Sato, Takao ; Okamoto, Tatsuaki

Author_Institution

Technol. Res. Lab., Shimadzu Corp., Kyoto, Japan

fYear

2012

fDate

Oct. 27 2012-Nov. 3 2012

Firstpage

4135

Lastpage

4137

Abstract

Chlorine (CI)-doped polycrystalline CdZnTe is expected to be used as photoconductor material for Flat Panel Xray detectors (FPDs) due to its high detection efficiency and environmental resistance. However, polycrystalline film causes great variability among pixels in the X-ray image of FPDs. To reduce the variability among pixels, chlorine doping methods and their effects were investigated. By combining the two methods, the addition of CdCl₂ to the source and the introduction of vapor chloroform during deposition, we were able to reduce the variability among pixels.

Keywords

II-VI semiconductors; X-ray detection; chlorine; grain growth; photoconducting materials; semiconductor counters; semiconductor doping; semiconductor growth; semiconductor thin films; CdZnTe:Cl; X-ray image; chlorine doped thick polycrystalline CdZnTe films; chlorine doping methods; environmental resistance; flat panel X-ray detectors; grain growth; high-detection efficiency; photoconductor material; vapor chloroform;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2012 IEEE

Conference_Location

Anaheim, CA

ISSN

1082-3654

Print_ISBN

978-1-4673-2028-3

Type

conf

DOI

10.1109/NSSMIC.2012.6551945

Filename

6551945