Electron irradiation effects in epitaxial InP solar cells

Author

Pearsall, N.M. ; Robson, N. ; Sambell, A.J. ; Anspaugh, B. ; Cross, T.A.

Author_Institution

Newcastle Polytech., UK

fYear

1991

fDate

7-11 Oct 1991

Firstpage

1554

Abstract

Performance data for InP-based solar cells after irradiation with 1-MeV electrons up to a fluence of 1×10¹⁶ e/cm ² are presented. Three InP cell structures are considered. Two of these have epitaxially grown active regions, these being a homojunction design and in ITO/InP structure. These are compared with ITO/InP cells without the epitaxial base region. The cell parameter variations, the influence of illumination during irradiation, and the effect on cell spectral response and capacitance measurements are discussed. Substantial performance recovery after thermal annealing at 90°C is reported

Keywords

III-V semiconductors; annealing; capacitance; electron beam effects; indium compounds; p-n homojunctions; semiconductor epitaxial layers; semiconductor materials; solar cells; tin compounds; 90 degC; ITO-InP; InSnO-InP; capacitance measurements; electron irradiation effects; epitaxial InP solar cells; epitaxially grown active regions; homojunction design; illumination; performance recovery; spectral response; thermal annealing; Annealing; Electrons; Epitaxial growth; Epitaxial layers; Fabrication; Indium phosphide; Photovoltaic cells; Process design; Sputtering; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE

Conference_Location

Las Vegas, NV

Print_ISBN

0-87942-636-5

Type

conf

DOI

10.1109/PVSC.1991.169465

Filename

169465