MOVPE growth of thick single crystal CdZnTe epitaxial layers on Si substrates for nuclear radiation detector development

Author

Niraula, M. ; Yasuda, Kazuhiro ; Namba, S. ; Kondo, Toshiaki ; Muramatsu, Shigeki ; Wajima, Y. ; Yamashita, Hiromasa ; Agata, Y.

Author_Institution

Nagoya Inst. of Technol., Nagoya, Japan

fYear

2012

fDate

Oct. 27 2012-Nov. 3 2012

Firstpage

4212

Lastpage

4215

Abstract

Details about the MOVPE growth of thick single crystal CdZnTe layers on (211)Si substrates are presented. The growth was carried out at a high substrate temperature of 650°C. Strict control of Zn-concentration in the grown epilayers was achieved by controlling the source materials flow-rates and ratio. The 4.2 K PL results show high intensity bound-exciton peaks which shifted to higher energies with increasing Zn-concentrations. A p-CdZnTe/p-CdTe/n-CdTe/n⁺ -Si heterojunction diode was fabricated and evaluated for its possible application in nuclear radiation detector applications, which exhibited good rectification property.

Keywords

crystal growth from melt; semiconductor epitaxial layers; silicon radiation detectors; MOVPE growth; Si substrates; Zn-concentration; heterojunction diode fabrication; nuclear radiation detector development; rectification property; source material flow-rates; temperature 650 degC; thick single crystal CdZnTe epitaxial layers;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2012 IEEE

Conference_Location

Anaheim, CA

ISSN

1082-3654

Print_ISBN

978-1-4673-2028-3

Type

conf

DOI

10.1109/NSSMIC.2012.6551960

Filename

6551960