DocumentCode
2563644
Title
Quantized Hall resistance measurements at KSRI
Author
Yoo, K.-H. ; Lee, K.P. ; Yu, K.M. ; Park, J.C. ; Bliek, L. ; Hein, G. ; Engelmann, H.-J. ; Weiman, G. ; Schlapp, W.
Author_Institution
Korea Stand. Res. Inst., Taejon, South Korea
fYear
1990
fDate
11-14 June 1990
Firstpage
350
Lastpage
351
Abstract
The authors describe the system for measuring quantized Hall resistances used at KSRI (Korea Standards Research Institute) and report preliminary results obtained with GaAs-AlGaAs heterostructures. The first result in terms of Omega /sub KSRI/ is: R/sub H4/=6453.2(1+0.36*10/sup -6/+or-0.32 *10/sup -6/) Omega /sub KSRI/.<>
Keywords
III-V semiconductors; aluminium compounds; electric resistance measurement; gallium arsenide; measurement standards; p-n heterojunctions; quantum Hall effect; GaAs-AlGaAs heterostructures; KSRI; Korea Standards Research Institute; measurement standards; quantized Hall resistances; Battery charge measurement; Bridge circuits; Current measurement; Electrical resistance measurement; Measurement standards; Measurement uncertainty; Resistors; Switches; Temperature; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements, 1990. CPEM '90 Digest., Conference on
Conference_Location
Ottawa, Ontario, Canada
Type
conf
DOI
10.1109/CPEM.1990.110055
Filename
110055
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