DocumentCode
2563825
Title
High temperature sensor based on SiC Schottky diodes with undoped oxide ramp termination
Author
Pascu, R. ; Draghici, F. ; Badila, M. ; Craciunoiu, F. ; Brezeanu, G. ; Dinescu, A. ; Rusu, I.
Author_Institution
Nat. Inst. for R&D in Microtechnol. (IMT), Bucharest, Romania
Volume
2
fYear
2011
fDate
17-19 Oct. 2011
Firstpage
379
Lastpage
382
Abstract
A simple technology of 4H-SiC Schottky diode with oxide ramp termination is presented. The ramp is controlled by two undoped layers: an annealed (compact) oxide layer and as deposited layer, respectively.
Keywords
Schottky diodes; annealing; electric sensing devices; high-temperature effects; silicon compounds; wide band gap semiconductors; Schottky diode; SiC; annealed oxide layer; deposited layer; high temperature sensor; undoped oxide ramp termination; Annealing; Electric fields; Etching; Schottky diodes; Silicon carbide; Temperature sensors; high temperature sensors; oxide ramp termination; packaging; silicon carbide (SiC);
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference (CAS), 2011 International
Conference_Location
Sinaia
ISSN
1545-827X
Print_ISBN
978-1-61284-173-1
Type
conf
DOI
10.1109/SMICND.2011.6095823
Filename
6095823
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