Circuit design and performance for large area electronics

Author

Lewis, Andrew ; Bruce, Roderik

Author_Institution

Xerox Palo Alto Res. Center, CA, USA

fYear

1990

fDate

14-16 Feb. 1990

Firstpage

222

Lastpage

223

Abstract

The performance of both digital and analog CMOS circuit elements fabricated using polysilicon thin-film transistors (TFTs) are discussed. The emphasis is on structures which are expected to play major roles in large-area electronics. Conventional CMOS designs are shown to be successful for digital circuits. However, special designs are required to overcome device limitations in implementing analog functions, and a simple operational amplifier designed specifically for TFTs is reported. A high-voltage CMOS buffer exploiting the structure of polysilicon TFTs is also reported.<>

Keywords

CMOS integrated circuits; analogue circuits; digital integrated circuits; thin film transistors; CMOS circuit elements; TFTs; analog functions; buffer; digital circuits; large area electronics; operational amplifier; polysilicon thin-film transistors; Active matrix technology; CMOS analog integrated circuits; CMOS digital integrated circuits; Circuit synthesis; Crystallization; Displays; MOSFETs; Operational amplifiers; Optical arrays; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1990. Digest of Technical Papers. 37th ISSCC., 1990 IEEE International

Conference_Location

San Francisco, CA, USA

Type

conf

DOI

10.1109/ISSCC.1990.110205

Filename

110205