Design and performance of a 94 GHz HEMT mixer

Author

Chow, P.D. ; Garske, D. ; Velebir, J. ; Hsieh, E. ; Ngan, Y.C. ; Yen, H.C.

Author_Institution

TRW Electron. Syst. Group, Redondo Beach, CA, USA

fYear

1989

fDate

13-15 June 1989

Firstpage

731

Abstract

A 94-GHz HEMT (high-electron-mobility transistor) mixer was designed and fabricated using a 0.1- mu m-gate HEMT device and a hybrid microwave integrated circuit. The mixer downconverts the 92-96-GHz RF to a 8-12-GHz IF (intermediate frequency). At 4-dBm LO (local oscillator) drive, the mixer showed 5.8-dB conversion loss, 12.4-dB noise figure, and -3.2-dBm input power at the 1-dB gain compression point. The HEMT mixer is suitable for a 94-GHz missile seeker application where available W-band LO power is extremely low. The HEMT mixer can be monolithically integrated with a HEMT low-noise amplifier to form a low-cost, small-size, and low-weight receiver front end for use in millimeter-wave smart munitions.<>

Keywords

high electron mobility transistors; hybrid integrated circuits; microwave integrated circuits; military equipment; mixers (circuits); 1 micron; 12.4 dB; 5.8 dB; 8 to 12 GHz; 92 to 96 GHz; EHF; HEMT mixer; SHF; W-band LO power; conversion loss; down conversion; high-electron-mobility transistor; hybrid MIC; microwave integrated circuit; millimeter-wave smart munitions; missile seeker application; receiver front end; HEMTs; Hybrid integrated circuits; Local oscillators; MODFETs; Microwave devices; Microwave integrated circuits; Missiles; Mixers; Noise figure; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1989., IEEE MTT-S International

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MWSYM.1989.38828

Filename

38828