A 1.2 ns GaAs 4 K read only memory

Author

Chun, Jung-Hoon ; Eden, R. ; Fiedler, A. ; Kang, Dong-Hyung ; Yeung, L.

Author_Institution

GigaBit Logic, Newbury Park, CA, USA

fYear

1988

fDate

6-9 Nov. 1988

Firstpage

83

Lastpage

86

Abstract

The first commercially available GaAs 4 K ROM (read-only memory) has been designed and manufactured using the 3-level metal HMED (high-margin enhancement/depletion) process. The access time of 1.2 ns is obtained with a power dissipation of 1.9 W. It is concluded that extra margin in the circuit design for a wide range of power supply variation and processing window has contributed to good processing yield. The design criteria also allow the target pinch-off voltage to be changed for a particular application need in power/speed combination.<>

Keywords

III-V semiconductors; field effect integrated circuits; gallium arsenide; integrated circuit technology; integrated memory circuits; read-only storage; 1.2 ns; 1.9 W; 3-level metal; 4 kbit; GaAs; HMED; ROM; access time; circuit design; commercially available; design criteria; high-margin enhancement/depletion; pinch-off voltage; power dissipation; power/speed combination; processing yield; read-only memory; semiconductors; wide processing window; wide range of power supply variation; Decoding; FETs; Gallium arsenide; Logic design; Packaging; Power dissipation; Power supplies; Read only memory; Table lookup; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE

Conference_Location

Nashville, Tennessee, USA

Type

conf

DOI

10.1109/GAAS.1988.11029

Filename

11029