• DocumentCode
    2568779
  • Title

    An SOI-Based 7.5/spl mu/m-Thick 0.15x0.15mm2 RFID Chip

  • Author

    Usami, M. ; Sato, Akira ; Tanabe, Hiroshi ; Iwamatsu, Takanori ; Maegawa, Shigeto ; Ohji

  • Author_Institution
    Hitachi, Tokyo
  • fYear
    2006
  • fDate
    6-9 Feb. 2006
  • Firstpage
    1191
  • Lastpage
    1200
  • Abstract
    A 0.15times0.15mm2 RFID chip containing a 128b ROM is fabricated in a 0.18mum 4M SOI CMOS technology. It achieves 480mm read range with a 2.45GHz carrier for a reader output power of 300mW. The chip is thinned precisely by using an SOI buried oxide layer structure as an etch stop. An RFID antenna is connected to the chip by using a double-surface electrode
  • Keywords
    CMOS integrated circuits; buried layers; radiofrequency identification; radiofrequency integrated circuits; read-only storage; silicon-on-insulator; 0.18 micron; 128 bit; 2.45 GHz; 300 mW; 4M SOI CMOS technology; 7.5 micron; RFID antenna; ROM; SOI buried oxide layer structure; SOI-based RFID chip; double-surface electrode; etch stop; reader output power; Capacitors; Circuits; Clocks; Costs; Electrodes; Radiofrequency identification; Read only memory; Rectifiers; Schottky diodes; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    1-4244-0079-1
  • Type

    conf

  • DOI
    10.1109/ISSCC.2006.1696165
  • Filename
    1696165
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2568779