Advanced 3D RESURF devices for power integrated circuits

Author

Udrea, Florin

Author_Institution

Dept. of Eng., Cambridge Univ., UK

Volume

2

fYear

2002

fDate

2002

Firstpage

229

Abstract

Power integrated circuits will be an area of high growth in IT and consumer products due to several factors, among which the following play the crucial role: regulations for increased efficiency, the need for smart features and high reliability, reduced size and weight, and all at a reduced unit cost. This paper is concerned with recent trends in high voltage devices for high voltage integrated circuits and in particular the application of the RESURF effect to the third dimension for a significant increase in the breakdown capability of lateral devices. New 3D device concepts are presented in comparison with classical LDMOSFETs and LIGBTs.

Keywords

power MOSFET; power integrated circuits; power semiconductor diodes; semiconductor device breakdown; silicon-on-insulator; 3D RESURF devices; IT products; LDMOSFET; LIGBT; RESURF effect; consumer products; efficiency regulations; high voltage devices; high voltage integrated circuits; lateral device breakdown capability; power integrated circuits; product size; product unit cost; product weight; reliability; smart features; Breakdown voltage; Consumer products; Costs; Integrated circuit reliability; Integrated circuit technology; Power integrated circuits; Switched-mode power supply; Switches; Switching circuits; Washing machines;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2002. CAS 2002 Proceedings. International

Print_ISBN

0-7803-7440-1

Type

conf

DOI

10.1109/SMICND.2002.1105839

Filename

1105839