DocumentCode
2572003
Title
Novel high power AlGaAs/GaAs HFET with a field-modulating plate operated at 35 V drain voltage
Author
Asano, K. ; Miyoshi, Y. ; Ishikura, K. ; Nashimoto, Y. ; Kuzuhara, M. ; Mizuta, M.
Author_Institution
ULSI Device Dev. Lab., NEC Corp., Otsu, Japan
fYear
1998
fDate
6-9 Dec. 1998
Firstpage
59
Lastpage
62
Abstract
This paper reports novel high power AlGaAs/GaAs heterostructure FET with a field-modulating plate (FP-HFET), which accomplished dramatic increase of the gate-drain breakdown voltage with greatly suppressed drain-current pulse-dispersion characteristics. The fabricated FETs exhibited excellent power performance up to 35 V at L-band, delivering the maximum power density of 1.7 W/mm.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; junction gate field effect transistors; power field effect transistors; 35 V; AlGaAs-GaAs; FP-HFET; L-band; drain-current pulse-dispersion; field-modulating plate; gate-drain breakdown voltage; high power AlGaAs/GaAs heterostructure FET; Breakdown voltage; Electrodes; FETs; Gallium arsenide; HEMTs; MESFETs; MODFETs; Passivation; Pulse modulation; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-4774-9
Type
conf
DOI
10.1109/IEDM.1998.746246
Filename
746246
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