DocumentCode
2572332
Title
A multi-gate single-electron transistor and its application to an exclusive-OR gate
Author
Takahashi, Y. ; Fujiwara, A. ; Yamazaki, K. ; Namatsu, H. ; Kurihara, K. ; Murase, K.
Author_Institution
NTT Basic Res. Labs., Atsugi, Japan
fYear
1998
fDate
6-9 Dec. 1998
Firstpage
127
Lastpage
130
Abstract
The two-input exclusive-OR (XOR) gate function was implemented by a multi-gate single-electron transistor. Two types of devices with different gate configurations were fabricated and tested. XOR operations were successfully performed through current switching at 40 K. The device has striking features for reducing the number of devices in logic circuits.
Keywords
field effect logic circuits; large scale integration; logic gates; single electron transistors; 40 K; XOR operations; current switching; exclusive-OR gate; gate configurations; logic circuits; multi-gate single-electron transistor; CMOS logic circuits; Capacitance; Circuit testing; Energy consumption; Equivalent circuits; Laboratories; Logic circuits; Logic devices; Single electron transistors; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-4774-9
Type
conf
DOI
10.1109/IEDM.1998.746296
Filename
746296
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