DocumentCode
2572633
Title
Design and Performance of A Broadband Millimeter-Wave MMC Mixer
Author
Yu Zhao ; Bin, Liao ; Xuebang Gao ; Hongjiang, Wu
Author_Institution
13th Res. Inst., CETC, Shijiazhuang, China
fYear
2012
fDate
19-21 Oct. 2012
Firstpage
383
Lastpage
386
Abstract
A Broadband Millimeter-Wave Passive Doubly-Balanced Mixer has been designed and fabricated with GaAs pHEMT process. The Mixer operates from 18 GHz to 50 GHz, with conversion loss less than 12 dB and LO to RF isolation greater than 25 dB. The IF bandwidth is from DC to 18 GHz. The Mixer employs ring diodes and spiral Marchand balun structure to improve operation bandwidth, conversion loss and port to port isolations. At one time, the chip size has been reduced remarkably, only 1.4mm×1.2mm.
Keywords
HEMT integrated circuits; III-V semiconductors; baluns; field effect MIMIC; field effect MMIC; gallium arsenide; millimetre wave mixers; GaAs; broadband millimeter wave MMC mixer; frequency 18 GHz to 50 GHz; operation bandwith; pHEMT process; passive doubly balanced mixer; ring diode; spiral Marchand balun; BroadBand; Double Balanced; Millimeter-Wave; Mixer Balun;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Problem-Solving (ICCP), 2012 International Conference on
Conference_Location
Leshan
Print_ISBN
978-1-4673-1696-5
Electronic_ISBN
978-1-4673-1695-8
Type
conf
DOI
10.1109/ICCPS.2012.6384327
Filename
6384327
Link To Document