Monte Carlo simulation of ion implantation into topographically complex structures

A new physically based Monte Carlo ion implantation simulator has been developed and implemented in UT-MARLOWE. The new simulator is capable of simulating 2-D and 3-D implants into arbitrary topography with multiple layers, both crystalline and amorphous. Emphasis has been placed on computational efficiency, and improvements over previous simulators ranging from 1-3 orders of magnitude in CPU time have been observed. The accuracy of the simulation is observed not to be compromised by the algorithms for improved computational efficiency.