Simulation of Electrical Characterization on Lateral Silicon-on-Insulator PIN Diode for Space Radiation Detector

Author

Zainudin, Z. ; Ismail, A.F. ; Hasbullah, N.F. ; Sabri, S.F.

Author_Institution

Dept. of Electr. & Comput. Eng., Int. Islamic Univ. of Malaysia, Gombak, Malaysia

fYear

2014

fDate

23-25 Sept. 2014

Firstpage

265

Lastpage

268

Abstract

This paper discusses on the performance of S OI pin diode radiation detector when compared to conventional bulk silicon pin diode radiation detector. Lateral S OI detector was virtually fabricated in SILVAC O ATHENA and its electrical characteristics was analyzed in SILVAC O ATLAS. It was found that S OI pin diode produced lower leakage current value with 1,10° A/μm² difference compared to bulk structure. However, the same S OI structure suffered from temperature variation with an increment of 1,102 A/μm² in current density after the temperature was varied from 27 °C to 80 °C.

Keywords

current density; leakage currents; p-i-n diodes; particle detectors; semiconductor device models; silicon-on-insulator; SILVACO ATLAS; SOI pin diode radiation detector; current density; electrical characterization; lateral silicon-on-insulator PIN diode; leakage current; space radiation detector; temperature 27 degC to 80 degC; Abstracts; Computers; Radiation detectors; SOI; bulk; lateral; pin diode; radiation detector; temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer and Communication Engineering (ICCCE), 2014 International Conference on

Conference_Location

Kuala Lumpur

Type

conf

DOI

10.1109/ICCCE.2014.82

Filename

7031653