DocumentCode
2574052
Title
Novel high-Q bondwire inductor for MMIC
Author
Yong-Goo Lee ; Sang-Ki Yun ; Hai-Young Lee
Author_Institution
Sch. of Electron. Eng., Ajou Univ., Suwon, South Korea
fYear
1998
fDate
6-9 Dec. 1998
Firstpage
548
Lastpage
551
Abstract
A novel high-Q on-chip inductor using bondwire loops is proposed for low cost and high performance GaAs MMIC. The measured maximum quality factor and the self-resonant frequency are 21.1 (26.5) and 11.3 (17.0) GHz for 3.5 (2.1) nH inductance, respectively. The electrical variations are measured within 5% tolerance. The on-chip bondwire inductor can be effectively used for developing GaAs MMIC with no external inductors.
Keywords
III-V semiconductors; MMIC; Q-factor; gallium arsenide; inductors; lead bonding; 11.3 GHz; 17.0 GHz; GaAs; GaAs MMIC; on-chip bondwire inductor; quality factor; self-resonant frequency; Bonding; Costs; Frequency; Gallium arsenide; Inductors; MMICs; Manufacturing; Q factor; Spirals; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-4774-9
Type
conf
DOI
10.1109/IEDM.1998.746418
Filename
746418
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