DocumentCode
2574127
Title
Remote charge scattering in MOSFETs with ultra-thin gate dielectrics
Author
Krishnan, M.S. ; Yee Chia Yeo ; Qiang Lu ; Tsu-Jae King ; Bokor, J. ; Chenming Hu
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fYear
1998
fDate
6-9 Dec. 1998
Firstpage
571
Lastpage
574
Abstract
In this work, we have studied the mobility degradation of inversion charge due to remote charge scattering (RCS), referring to scattering of mobile charges in the inversion layer by charged impurities present in the gate material of a MOSFET. The results indicate a 20-30% reduction in the electron mobility because of RCS, for gate oxide thicknesses lower than 15 /spl Aring/.
Keywords
MOSFET; dielectric thin films; electron mobility; inversion layers; leakage currents; semiconductor device reliability; 15 angstrom; MOSFETs; charged impurities; electron mobility; gate oxide thicknesses; inversion charge; inversion layer; mobility degradation; remote charge scattering; ultra-thin gate dielectrics; Degradation; Dielectrics; Electron mobility; Impurities; MOSFETs; Mobile computing; Particle scattering; Permittivity; Poisson equations; Quantization;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-4774-9
Type
conf
DOI
10.1109/IEDM.1998.746423
Filename
746423
Link To Document