DocumentCode
25744
Title
Modified single-carrier multilevel sinusoidal pulse width modulation for asymmetrical insulated gate bipolar transistor-clamped grid-connected inverter
Author
Fengjiang Wu ; Jiandong Duan ; Fan Feng
Author_Institution
Dept. of Electr. Eng., Harbin Inst. of Technol., Harbin, China
Volume
8
Issue
8
fYear
2015
fDate
8 2015
Firstpage
1531
Lastpage
1541
Abstract
Conventional sinusoidal pulse width modulation (SPWM) for single-phase asymmetrical seven-level insulated gate bipolar transistor (IGBT)-clamped grid-connected inverter (IC-GCI) needs an additional logic operation circuit and a dead zone generation circuit, which raises cost and complicates the implementation. In addition, both added circuitries decrease the reliability. In this study, a modified single-carrier multilevel SPWM (MSCM-SPWM) scheme suitable for IC-GCI is proposed. By setting one carrier, three digital signals to identify voltage zones and six equivalent modulation waves, the control signals of the switches in IC-GCI can be generated with only one digital signal processor controller and simple logic operation. It makes the implementation of the multilevel GCI easier. The detailed spectral character of the MSCM-SPWM is originally derived based on double-Fourier integral theory and then compared with the conventional scheme. It proves that they own the similar spectral character. Detailed simulation and experimental results verify the accuracy and feasibility of the MSCM-SPWM and the single-phase IC-GCI.
Keywords
Fourier transforms; PWM invertors; digital signal processing chips; insulated gate bipolar transistors; power grids; power transistors; switching convertors; transistor circuits; IGBT-clamped grid-connected inverter; MSCM-SPWM scheme; asymmetrical insulated gate bipolar transistor; control signals; dead zone generation circuit; digital signal processor controller; double-Fourier integral theory; equivalent modulation waves; logic operation circuit; modified single-carrier multilevel sinusoidal pulse width modulation scheme; multilevel GCI; single-phase IC-GCI; voltage zones;
fLanguage
English
Journal_Title
Power Electronics, IET
Publisher
iet
ISSN
1755-4535
Type
jour
DOI
10.1049/iet-pel.2014.0519
Filename
7166526
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