Advanced performance of small-scaled InGaP/GaAs HBT´s with f/sub T/ over 150 GHz and f/sub max/ over 250 GHz

Author

Oka, T. ; Hirata, K. ; Ouchi, K. ; Uchiyama, H. ; Taniguchi, T. ; Mochizuki, K. ; Nakamura, T.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

fYear

1998

fDate

6-9 Dec. 1998

Firstpage

653

Lastpage

656

Abstract

We have achieved advanced high-frequency performance in small-scaled InGaP/GaAs HBT´s due to the further reduction of the parasitic capacitance by refining the device design and the process technology. An f/sub T/ of 156 GHz and an f/sub max/ of 255 GHz were achieved for an HBT with an emitter size S/sub E/ of 0.5/spl times/4.5 1/spl mu/m/sup 2/ at a collector current I/sub C/ of 3.5 mA. A 1/8 static frequency divider using these HBT´s operated at a maximum toggle frequency of 39.5 GHz.

Keywords

III-V semiconductors; bipolar MIMIC; bipolar digital integrated circuits; capacitance; frequency dividers; gallium arsenide; gallium compounds; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; low-power electronics; millimetre wave bipolar transistors; 156 GHz; 255 GHz; 3.5 mA; 39.5 GHz; InGaP-GaAs; device design; high-frequency performance; parasitic capacitance; process technology; small-scaled InGaP/GaAs HBTs; static frequency divider; Electrodes; Electron mobility; Epitaxial layers; Fabrication; Frequency conversion; Gallium arsenide; Heterojunction bipolar transistors; Parasitic capacitance; Process design; Thermal management;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746441

Filename

746441