A novel high-frequency quasi-SOI power MOSFET for multi-gigahertz applications

Author

Matsumoto, S. ; Ishiyama, T. ; Hiraoka, Y. ; Sakai, T. ; Yachi, T. ; Kamitsuna, H. ; Muraguchi, M.

Author_Institution

NTT Integrated Inf. & Energy Syst. Labs., Tokyo, Japan

fYear

1998

fDate

6-9 Dec. 1998

Firstpage

945

Lastpage

948

Abstract

We have fabricated a high-efficiency quasi-SOI power MOSFET for multi-gigahertz applications. The device was formed by reversed silicon wafer direct bonding which enables easy use of a high-resistivity substrate. The breakdown voltage of the quasi-SOI power MOSFET is more than twice that of a conventional SOI power MOSFET. Fmax of the quasi-SOI power MOSFET is 11.0 GHz, about 15% higher than that of the SOI power MOSFET. The fabricated device has the excellent power added efficiency of 68% at a 2 GHz under 3.6 V operation.

Keywords

microwave field effect transistors; microwave power transistors; power MOSFET; semiconductor device breakdown; silicon-on-insulator; wafer bonding; 11.0 GHz; 3.6 V; 68 percent; breakdown voltage; high-frequency quasi-SOI power MOSFET; high-resistivity substrate; microwave FETs; multi-gigahertz applications; power added efficiency; reversed wafer direct bonding; Electrodes; Integrated circuit technology; Laboratories; MMICs; MOSFET circuits; Power MOSFET; Radio frequency; Silicon; Substrates; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746510

Filename

746510