DocumentCode
2576507
Title
Finite Element Analysis of TSOP Silicon Die Crack Issue during Molding Process
Author
Yang, Zhenyu ; Wang, Mingxiang ; Xu, Huaping
Author_Institution
Dept. of Microelectron., Soochow Univ., Suzhou
fYear
2006
fDate
26-29 Aug. 2006
Firstpage
1
Lastpage
3
Abstract
In molding process, there is a step to release molded package blocks from the moulds by ejection pins. Silicon die crack failures might occur in some kind of thin small outline package (TSOP) in this mould-release step. In this work, mould-release process for a TSOP product is simulated by finite element method to clarify the mechanism of silicon die crack failures. Our analysis demonstrates that some adhesion area by organic contamination on mould inner surface, during mould-release step, may impede package block to be released smoothly from the mould, leading to locally built internal stress within silicon and causing die crack failures. Die crack risks with adhesion area in different size, shape and position are compared and high-risk conditions are defined. Die crack failure can be reduced in packages using high elastic molding compound (MC)
Keywords
cracks; electronics packaging; elemental semiconductors; finite element analysis; internal stresses; moulding; silicon; Si; ejection pins; elastic molding compound; finite element analysis; internal stress; mould-release process; organic contamination; silicon die crack failures; thin small outline package; Adhesives; Failure analysis; Finite element methods; Lead; Packaging; Pins; Silicon; Surface contamination; Surface cracks; Surface impedance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology, 2006. ICEPT '06. 7th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0619-6
Electronic_ISBN
1-4244-0620-X
Type
conf
DOI
10.1109/ICEPT.2006.359804
Filename
4198925
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