Two-Sided Silicon Nanowire Array/Bulk Thermoelectric Power Generator

Author

Bin Xu ; Khouri, Wasim ; Fobelets, Kristel

Author_Institution

Dept. of Electr. & Electron. Eng., Imperial Coll. London, London, UK

Volume

35

Issue

5

fYear

2014

fDate

May-14

Firstpage

596

Lastpage

598

Abstract

To improve the output power of n-and p-type Si nanowire array (NWA)/bulk thermoelectric power generators (TEGs) fabricated using metal assisted chemical etching, post-nanowire-etch spin-on-doping (SOD), and arrays on both sides of the bulk are used. Post-process SOD increases the power factor and removes surface depletion/inversion effects while maintaining crystalline NWs. A maximum output power of 3.5 μW for a p-NWA/bulk/NWA TEG with NWA length of 23 and 24 μm is obtained for an external temperature difference of 37 °C and a TEG area of 25 mm².

Keywords

elemental semiconductors; nanowires; semiconductor doping; semiconductor quantum wires; silicon; thermoelectric conversion; energy harvesting; metal assisted chemical etching; post-nanowire-etch spin-on-doping; power 3.5 muW; power factor; size 23 mum; size 24 mum; surface depletion-inversion effects removal; temperature 37 degC; two-sided silicon nanowire array-bulk thermoelectric power generator; Arrays; Conductivity; Doping; Electrical resistance measurement; Power generation; Silicon; Temperature measurement; Energy harvesting; power; silicon nanowire; thermoelectric; thermoelectric.;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2307673

Filename

6762862