• DocumentCode
    2576723
  • Title

    Discrimination of higher-order modes in photonic-crystal VCSEL

  • Author

    Czyszanowski, Tomasz

  • Author_Institution
    Inst. of Phys., Tech. Univ. of Lodz, Lodz
  • fYear
    2009
  • fDate
    12-14 Jan. 2009
  • Firstpage
    20
  • Lastpage
    21
  • Abstract
    Self-consistent modeling of threshold characteristics of an InP-based 1300-nm AlInGaAs photonic-crystal vertical-cavity surface-emitting diode laser is presented. It shows that a shallow photonic crystal deteriorates the VCSEL characteristics, however deeper, optimized etching assures low threshold.
  • Keywords
    III-V semiconductors; aluminium compounds; etching; gallium arsenide; indium compounds; laser beams; laser cavity resonators; laser modes; optical materials; photonic crystals; semiconductor lasers; surface emitting lasers; AlInGaAs-InP; higher-order mode; photonic-crystal VCSEL; self-consistent model; vertical cavity surface emitting diode laser; wavelength 1300 nm; Apertures; Distributed Bragg reflectors; Etching; Laser modes; Optical refraction; Optical variables control; Photonic crystals; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE/LEOS Winter Topicals Meeting Series, 2009
  • Conference_Location
    Innsbruck
  • Print_ISBN
    978-1-4244-2610-2
  • Electronic_ISBN
    978-1-4244-2611-9
  • Type

    conf

  • DOI
    10.1109/LEOSWT.2009.4771634
  • Filename
    4771634