• DocumentCode
    2577025
  • Title

    Characterization of electronic transport through Si dot with Ge core using AFM conducting probe

  • Author

    Darma, Y. ; Miyazaki, S.

  • Author_Institution
    Dept. of Electr. Eng., Hiroshima Univ., Japan
  • fYear
    2003
  • fDate
    29-31 Oct. 2003
  • Firstpage
    22
  • Lastpage
    23
  • Abstract
    In this paper, to gain a better understanding of electronic transport through the dots consisting of the Si clad and the Ge core, we have extended our research to the investigation of the local electronic transport through the Si dot with Ge core on ultrathin SiO/sub 2/ layer.
  • Keywords
    atomic force microscopy; core levels; elemental semiconductors; germanium; semiconductor quantum dots; silicon; silicon compounds; valence bands; AFM conducting probe; Ge core; Si clad; Si dot; Si-Ge-Si; Si-SiO/sub 2/; electronic transport; ultrathin SiO/sub 2/ layer; Carrier confinement; Charge carrier processes; Chemical vapor deposition; Electron emission; Nonvolatile memory; Probes; Quantum dots; Single electron transistors; Surface topography; US Department of Transportation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-040-2
  • Type

    conf

  • DOI
    10.1109/IMNC.2003.1268499
  • Filename
    1268499
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2577025