Micromachined relay which utilizes single crystal silicon electrostatic actuator

Author

Sakata, M. ; Komura, Y. ; Seki, T. ; Kobayashi, K. ; Sano, K. ; Horiike, S.

Author_Institution

Omron Corp., Tsukuba, Japan

fYear

1999

fDate

21-21 Jan. 1999

Firstpage

21

Lastpage

24

Abstract

A MMR which utilizes a single crystal silicon based electrostatic actuator is presented in this paper. The MMR is fabricated by critical-dimensions-controllable SOI-A/B (Anodic bonding) process. Size of the MMR is 2.0 mm/spl times/2.5 mm and driving voltage is 24 V. Hot-switching tests with 10 V-10 mA resistive load were performed 10/sup 6/ cycles with around 0.5 ohm relay resistance (sum. of signal line resistance, contact resistance and package resistance). Breakdown voltage (stand off voltage) is larger than 200 V. Switching time was around 03 msec and power consumption was less than 0.05 mW.

Keywords

electrostatic actuators; elemental semiconductors; micromachining; semiconductor relays; silicon; SOI anodic bonding; Si; hot switching; micromachined relay; resistance; single crystal silicon electrostatic actuator; Bonding; Breakdown voltage; Contact resistance; Electrostatic actuators; Energy consumption; Packaging; Performance evaluation; Relays; Silicon; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 1999. MEMS '99. Twelfth IEEE International Conference on

Conference_Location

Orlando, FL, USA

ISSN

1084-6999

Print_ISBN

0-7803-5194-0

Type

conf

DOI

10.1109/MEMSYS.1999.746745

Filename

746745