Bonding Packaging of a SP4T RF MEMS Switch

Author

Hu, Guangwei ; Liu, Zewen ; Qiao, Yi ; Hou, Zhihao ; Cai, Jian ; Liu, Litian ; Li, Zhjian

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing

fYear

2006

fDate

26-29 Aug. 2006

Firstpage

1

Lastpage

4

Abstract

A study on bonding packaging of a SP4T series RF MEMS switch with metal-to-metal contact is presented. The switch, with the total die size of 3580mum times 2740mum, consists of a coplanar waveguide (CPW), SiON dielectric bridge membranes and broadside actuation electrodes. In order to protect the movable structures from the mechanical damage as well as the particle contaminations, a high-resistivity silicon cap with a rectangular cavity of 50mum depth is designed, fabricated via etching in KOH solution at 80 degC, and bonded on top of the switch with epoxy resin. The results show the bonding between the cap and the switch support substrate is mechanically robust and the degradation of the isolation is in the range of 5%-10% in the frequency band from 1-10 GHz

Keywords

coplanar waveguides; microswitches; packaging; 1 to 10 GHz; SP4T RF MEMS switch; bonding packaging; broadside actuation electrodes; coplanar waveguide; dielectric bridge membranes; epoxy resin; metal-to-metal contact; Biomembranes; Bonding; Bridge circuits; Contacts; Coplanar waveguides; Dielectrics; Electrodes; Packaging; Radiofrequency microelectromechanical systems; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology, 2006. ICEPT '06. 7th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0619-6

Electronic_ISBN

1-4244-0620-X

Type

conf

DOI

10.1109/ICEPT.2006.359869

Filename

4198990