Electrical properties of silicon oxide nanocomposites of porous silicon

Author

Olenych, I. ; Monastyrskii, L. ; Sokolovskii, B.

Author_Institution

Ivan Franko Nat. Univ. of Lviv, Lviv, Ukraine

fYear

2014

fDate

26-30 May 2014

Firstpage

96

Lastpage

97

Abstract

The impedance spectra of silicon oxide nanocomposites of porous silicon is investigated in 25 Hz - 1 MHz frequency range. The different dispersion of electrical capacity in different frequency bands and complex relaxation processes that affect the electric transport properties of nanocomposites were revealed. Based on the analysis of spectra of thermal stimulated depolarization it was shown that oxidation of the surface of porous silicon nanocrystals gives rise to changing the density of states in different energy ranges.

Keywords

electrochemical impedance spectroscopy; elemental semiconductors; nanocomposites; oxidation; porous semiconductors; semiconductor-insulator boundaries; silicon; silicon compounds; thermally stimulated currents; Si-SiO₂; complex relaxation processes; density-of-states; electric transport properties; electrical capacity dispersion; electrical properties; frequency 25 Hz to 1 MHz; frequency bands; impedance spectra; oxidation; porous silicon; porous silicon nanocrystals; silicon oxide nanocomposites; thermal stimulated depolarization; Luminescence; Silicon; charge relaxation; impedance; porous silicon; thermally stimulated depolarization;

fLanguage

English

Publisher

ieee

Conference_Titel

Oxide Materials for Electronic Engineering (OMEE), 2014 IEEE International Conference on

Conference_Location

Lviv

Print_ISBN

978-1-4799-5960-0

Type

conf

DOI

10.1109/OMEE.2014.6912357

Filename

6912357