High pressure hydrogen annealing effect of CESL nitride stressor MOSFETs with metal gate/high-k dielectric on the performance and reliability

Author

Min Sang Park ; Kyong Taek Lee ; Seung Ho Hong ; Seung Hyun Song ; Gil Bok Choi ; Rock Hyun Baek ; Hyun Sik Choi ; Hyun Chul Sagong ; Sung Woo Jung ; Chang Yong Kang ; Woo, B. ; Jeong, Yoon-Ha

Author_Institution

Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea

fYear

2009

fDate

2-5 June 2009

Firstpage

229

Lastpage

232

Abstract

We present high pressure hydrogen annel (HPHA) effects in two types contact etch stop layer (CESL) nitride MOSFETs. Performances increased in both samples of using rapid thermal chemical vapor deposition (RTCVD) and plasma enhanced chemical vapor deposition (PECVD) nitride stress layers, but reliability only degraded in PECVD samples after HPHA.

Keywords

MOSFET; annealing; high-k dielectric thin films; plasma CVD; semiconductor device reliability; CESL nitride stressor; MOSFET; PECVD; contact etch stop layer nitride; high pressure hydrogen annealing; metal gate/high-k dielectric; plasma enhanced chemical vapor deposition; rapid thermal chemical vapor deposition; semiconductor device reliability; Chemical vapor deposition; Etching; High-K gate dielectrics; Hydrogen; MOSFETs; Plasma applications; Plasma chemistry; Rapid thermal annealing; Thermal degradation; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE

Conference_Location

Traverse City, MI

Print_ISBN

978-1-4244-4695-7

Electronic_ISBN

978-1-4244-4696-4

Type

conf

DOI

10.1109/NMDC.2009.5167527

Filename

5167527