Gate-defined quantum devices realized on an InGaAs/InP heterostructure by incorporating a high-κ dielectric material

Author

Sun, Jie ; Larsson, Marcus ; Maximov, Ivan ; Xu, H.Q.

Author_Institution

Div. of Solid State Phys., Lund Univ., Lund, Sweden

fYear

2009

fDate

2-5 June 2009

Firstpage

183

Lastpage

185

Abstract

Gate-defined quantum devices in an InGaAs/InP heterostructure are achieved by introducing a HfO₂ layer as the gate dielectric. The high-kappa layer is grown by atomic layer deposition and the fabrication process is described in detail. Electrical measurements at low temperature reveal the Coulomb blockade effect. Magnetotransport characterization is also carried out for the devices made from this promising spintronic material and the current peaks are found to shift in spin pairs with the applied B-field perpendicular to the wafer.

Keywords

Coulomb blockade; III-V semiconductors; atomic layer deposition; gallium arsenide; galvanomagnetic effects; indium compounds; semiconductor devices; Coulomb blockade effect; InGaAs-InP; atomic layer deposition; gate-defined quantum devices; high-kappa dielectric material; magnetotransport; spin pairs; Atomic layer deposition; Current measurement; Dielectric devices; Dielectric materials; Fabrication; Hafnium oxide; Indium gallium arsenide; Indium phosphide; Magnetic materials; Temperature measurement; High-κ dielectric; InGaAs/InP; Quantum devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE

Conference_Location

Traverse City, MI

Print_ISBN

978-1-4244-4695-7

Electronic_ISBN

978-1-4244-4696-4

Type

conf

DOI

10.1109/NMDC.2009.5167541

Filename

5167541