Proposal of ZnSe/GaAs digital alloys for high band gap solar cells and true green LEDs

Author

Montgomery, Kyle H. ; Agarwal, Samarth ; Klimeck, Gerhard ; Woodall, Jerry M.

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

fYear

2009

fDate

2-5 June 2009

Firstpage

217

Lastpage

220

Abstract

Solar cells tuned for high energy photon absorption and light emitting diodes tuned for true green wavelength emission are proposed using the ZnSe/GaAs (001) superlattice. The effective band gap of this superlattice as a function of monolayers of ZnSe and GaAs within the range of 1.5 to 2.3 eV is shown. A discussion is given on the application of this particular superlattice in multijunction solar cells and solid-state lighting.

Keywords

II-VI semiconductors; energy gap; gallium arsenide; light emitting diodes; semiconductor superlattices; wide band gap semiconductors; zinc compounds; ZnSe-GaAs; digital alloys; electron volt energy 1.5 eV to 2.3 eV; high band gap solar cells; high energy photon absorption; light emitting diodes; monolayers; superlattice; Absorption; Digital alloys; Gallium arsenide; Light emitting diodes; Photonic band gap; Photovoltaic cells; Proposals; Solid state lighting; Superlattices; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE

Conference_Location

Traverse City, MI

Print_ISBN

978-1-4244-4695-7

Electronic_ISBN

978-1-4244-4696-4

Type

conf

DOI

10.1109/NMDC.2009.5167542

Filename

5167542