• DocumentCode
    2578847
  • Title

    Patterning sub 100 nm isolated patterns with 436 nm lithography

  • Author

    Hanmin Yao ; Yu Guobin ; Peiying Yan ; Chen Xianzhong ; Xiangang Luo

  • Author_Institution
    Inst. of Opt. & Electron., Chinese Acad. of Sci., Chengdu, China
  • fYear
    2003
  • fDate
    29-31 Oct. 2003
  • Firstpage
    130
  • Abstract
    Summary form only given. In this paper, we propose a way to fabricate sub 100 nm isolated holes or lines with exposure wavelength of 436 nm. The masks are prepared by electron beam lithography and liftoff process.
  • Keywords
    electron beam lithography; masks; photolithography; surface plasmons; 100 nm; 436 nm; electron beam lithography; isolated patterns; liftoff process; masks; surface plasmons; Apertures; Corrugated surfaces; Lithography; Optical surface waves; Plasmons; Surface waves;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-040-2
  • Type

    conf

  • DOI
    10.1109/IMNC.2003.1268610
  • Filename
    1268610
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2578847