DocumentCode
2578857
Title
Patterning of GaAs by nanoelectrode lithography
Author
Yokoo, A.
Author_Institution
NTT Basic Res. Labs., NTT Corp., Atsugi, Japan
fYear
2003
fDate
29-31 Oct. 2003
Firstpage
132
Lastpage
133
Abstract
In this paper, we presents results on the patterning of GaAs by nanoelectrode lithography. Electrochemical reaction and SEM image of GaAs surface were examined.
Keywords
III-V semiconductors; electrochemistry; gallium arsenide; nanolithography; scanning electron microscopy; GaAs; GaAs surface; SEM; electrochemical reaction; nanoelectrode lithography; Conducting materials; Fabrication; Gallium arsenide; Lithography; Oxidation; Scanning electron microscopy; Semiconductor materials; Substrates; Ultraviolet sources; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-040-2
Type
conf
DOI
10.1109/IMNC.2003.1268611
Filename
1268611
Link To Document