Exact inductive parasitic extraction for analysis of IGBT parallel switching including DCB-backside eddy currents

Author

Gutsmann, B. ; Mourick, P. ; Silber, D.

Author_Institution

Inst. for Electr. Drives, Bremen Univ., Germany

Volume

3

fYear

2000

fDate

2000

Firstpage

1291

Abstract

This paper deals with the parallel switching process of IGBTs in a power module. It is shown experimentally and by simulation that eddy currents in the direct copper bonding (DCB) ceramics backside metallization have an important influence on switching behaviour. An effective simulation tool based on the partial element equivalent circuit (PEEC) method is used to extract all inductive couplings for circuit modeling

Keywords

bipolar transistor switches; eddy currents; equivalent circuits; insulated gate bipolar transistors; power bipolar transistors; power convertors; power semiconductor switches; semiconductor device measurement; semiconductor device metallisation; semiconductor device models; semiconductor device testing; switching circuits; IGBT parallel switching; circuit modeling; direct copper bonding ceramics backside metallization; eddy currents; exact inductive parasitic extraction; inductive couplings; partial element equivalent circuit method; power module; simulation tool; switching behaviour; Bonding; Ceramics; Circuit simulation; Copper; Coupling circuits; Eddy currents; Equivalent circuits; Insulated gate bipolar transistors; Metallization; Multichip modules;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 2000. PESC 00. 2000 IEEE 31st Annual

Conference_Location

Galway

ISSN

0275-9306

Print_ISBN

0-7803-5692-6

Type

conf

DOI

10.1109/PESC.2000.880496

Filename

880496