An Advanced 2.5nm Oxidized Nitride Gate Dielectric For Highly Reliable 0.25/spl mu/m MOSFETs

Author

Yamamoto, T. ; Ogura, T. ; Saito, Y. ; Uwasawa, K. ; Tatsumi, T. ; Mogami, T.

Author_Institution

Microelectronics Research Laboratories, NEC Corporation 1120 Shimokuzawa, Saganihara, Kanagawa 229, Japan

fYear

1997

fDate

10-12 June 1997

Firstpage

Lastpage

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on

Print_ISBN

4-930813-75-1

Type

DOI

10.1109/VLSIT.1997.623687

Filename

623687

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