DocumentCode
2580624
Title
General purpose RFICs using 0.35 um SiGe BiCMOS technology
Author
Meng, Chinchun ; Wu, Tzung-Han ; Wu, Tse-Hung
Author_Institution
Nat. Chiao Tung Univ., Dept. of Commun. Eng., Hsinchu, Taiwan
fYear
2005
fDate
15-16 Aug. 2005
Abstract
This paper presents an overview of several 5 GHz general purpose RFICs implemented using 0.35 um SiGe BiCMOS technology by our research group. These RFICs include emitter-inductively-degenerated cascode LNA, shunt-series shunt-shunt dual feedback wideband amplifier, common mode feedback Gilbert down-converter, Gilbert up-converter with EC current mirrors and Gilbert down-converter with polyphase filters for image rejection.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; bipolar MMIC; convertors; low noise amplifiers; wideband amplifiers; 0.35 micron; 5 GHz; EC current mirrors; Gilbert up-converter; RFIC; SiGe; SiGe BiCMOS technology; common mode feedback Gilbert down-converter; emitter-inductively-degenerated cascode LNA; image rejection; polyphase filters; shunt-series shunt-shunt dual feedback wideband amplifier; BiCMOS integrated circuits; Broadband amplifiers; Circuit topology; Feedback; Filters; Germanium silicon alloys; Heterojunction bipolar transistors; Radio frequency; Radiofrequency integrated circuits; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Emerging Information Technology Conference, 2005.
Print_ISBN
0-7803-9328-7
Type
conf
DOI
10.1109/EITC.2005.1544339
Filename
1544339
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