Evaluation of silicon carbide devices for hybrid vehicle drives

Author

Roberts, G.J. ; Bryant, A.T. ; Mawby, P.A. ; Ueta, T. ; Nisijima, T. ; Hamada, K.

Author_Institution

Univ. of Warwick, Coventry

fYear

2007

fDate

2-5 Sept. 2007

Firstpage

1

Lastpage

10

Abstract

This paper describes an integrated simulation framework for modelling inverter performance, and evaluating power devices in hybrid electric vehicle drives to include SiC Schottky diodes and MOSFETs. Based in MATLAB/Simulink, a novel method of decoupling the device and inverter simulation is used with these new material devices. An illustration is given for a hybrid vehicle subjected to a real driving cycle. The simulation framework offers the potential to rapidly improve the inverter design process, and to evaluate new material device selection quickly.

Keywords

hybrid electric vehicles; power semiconductor devices; silicon compounds; wide band gap semiconductors; MOSFET; Schottky diodes; SiC; hybrid electric vehicle drives; hybrid vehicle drives; integrated simulation framework; inverter design process; power semiconductor device; silicon carbide devices; Engines; Inverters; MOSFETs; Mechanical power transmission; Predictive models; Schottky diodes; Silicon carbide; Temperature; Vehicle driving; Vehicles; device modelling; hybrid electric vehicle; mission profile; power semiconductor device; silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications, 2007 European Conference on

Conference_Location

Aalborg

Print_ISBN

978-92-75815-10-8

Electronic_ISBN

978-92-75815-10-8

Type

conf

DOI

10.1109/EPE.2007.4417371

Filename

4417371