Electron cyclotron resonance-reactive ion etching of InGaAs/InAlAs/InP multilayer structure and GaN by cyclic injection of CH/sub 4//H/sub 2//Ar and O/sub 2/ with constant Ar flow

Author

Haneji, N. ; Ide, T. ; Awa, Y. ; Arakawa, T. ; Tada, K. ; Sugiyama, M. ; Shimogaki, Y. ; Nakano, Y.

Author_Institution

Graduate Sch. of Eng., Yokohama Nat. Univ., Japan

fYear

2003

fDate

29-31 Oct. 2003

Firstpage

330

Lastpage

331

Abstract

In this paper, we showed the combination of continuous etching and cyclic etching with/without constant Ar flow to each multilayer structure such as InGaAs/InAlAs/InP for optical devices such as lasers and optical modulators. We also applied cyclic etching with constant Ar flow to GaN, and obtained good surface morphology and etching characteristics.

Keywords

III-V semiconductors; aluminium compounds; cyclotron resonance; gallium arsenide; indium compounds; multilayers; semiconductor thin films; sputter etching; surface morphology; Ar; Ar flow; GaN; H/sub 2/; H/sub 2/-Ar-O/sub 2/; InGaAs-InAlAs-InP; InGaAs/InAlAs/InP multilayer structure; O/sub 2/; cyclic etching; electron cyclotron resonance; lasers; optical devices; optical modulators; reactive ion etching; surface morphology; Argon; Cyclotrons; Electrons; Etching; Gallium nitride; Indium compounds; Indium gallium arsenide; Indium phosphide; Nonhomogeneous media; Resonance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-040-2

Type

conf

DOI

10.1109/IMNC.2003.1268780

Filename

1268780