DocumentCode
2581953
Title
Modeling high speed MRI coil switching using PIN diodes
Author
Caverly, Robert H. ; Doherty, William E., Jr. ; Watkins, Ronald D.
fYear
2011
fDate
5-10 June 2011
Firstpage
1
Lastpage
4
Abstract
A dynamic time-domain model with improved reverse bias modeling performance suitable of modeling high speed switching in MRI coils with PIN diodes is presented. This model is easily integrated with previous forward bias charge control models and now allows full modeling of high speed, high frequency PIN diodes in time domain simulators. The model is verified with experimental data and good agreement was obtained. The model is then used in determining the dynamic switching characteristics of MRI coils.
Keywords
magnetic resonance imaging; p-i-n diodes; semiconductor device models; semiconductor switches; MRI coil switching; PIN diodes; dynamic switching; dynamic time-domain model; forward bias charge control models; reverse bias modeling; Capacitance; Coils; Integrated circuit modeling; PIN photodiodes; Resistance; SPICE; Solid modeling; SPICE; semiconductor switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location
Baltimore, MD
ISSN
0149-645X
Print_ISBN
978-1-61284-754-2
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2011.5972613
Filename
5972613
Link To Document