• DocumentCode
    2582625
  • Title

    VHDL-AMS model of IGBT for electro-thermal simulation

  • Author

    Ibrahim, Their ; Allard, Bruno ; Morel, Hervé ; Mrad, Sabrine

  • Author_Institution
    AMPERE, Villeurbanne
  • fYear
    2007
  • fDate
    2-5 Sept. 2007
  • Firstpage
    1
  • Lastpage
    10
  • Abstract
    Many IGBT models have been published but none using VHDL-AMS language. The paper objective is to detail the electro-thermal simulation of IGBT and the coupling between electrical and thermal models using VHDL-AMS as a simulation language. This technique uses an electric circuit simulator and is based on a power IGBT model with temperature-dependent characteristics. Particular attention will be given to the extraction of model parameters. A novel electro-thermal coupling simulation is proposed. The simulation results using electrical and electro-thermal model show good agreements with measurement results. The compact thermal model is validated by a comparison to measured temperature transient responses.
  • Keywords
    hardware description languages; insulated gate bipolar transistors; IGBT; VHDL AMS model; electric circuit simulator; electro thermal coupling simulation; temperature dependent characteristics; temperature transient responses; Bonding; Circuit simulation; Circuit testing; Computational modeling; Coupling circuits; Equations; Insulated gate bipolar transistors; MOSFETs; Power system modeling; Temperature measurement; IGBT; Measurement; Modeling; Simulation; Thermal design;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Applications, 2007 European Conference on
  • Conference_Location
    Aalborg
  • Print_ISBN
    978-92-75815-10-8
  • Electronic_ISBN
    978-92-75815-10-8
  • Type

    conf

  • DOI
    10.1109/EPE.2007.4417461
  • Filename
    4417461