Performance of 3D capacitors integrated on silicon for DC-DC converter applications

Author

Benazzi, A. ; Brunet, M. ; Dubreuil, P. ; Mauran, N. ; Bary, L. ; Laur, J.-P. ; Sanchez, J.-L. ; Isoird, K.

Author_Institution

Univ. of Toulouse, Toulouse

fYear

2007

fDate

2-5 Sept. 2007

Firstpage

1

Lastpage

9

Abstract

The integration of passive components on silicon for future DC-DC converters applications is still a challenging area of research. This paper focuses on integrated 3D capacitors with high capacitance density fabricated with microfabrication techniques on silicon and in particular DRIE. The fabricated prototypes were characterised: a capacitance density between 29 and 46 nF/mm² was demonstrated up to 800 kHz. An improvement is presented on the equivalent series resistance (ESR), which impedes currently on the component utilisation at higher frequencies.

Keywords

DC-DC power convertors; capacitors; elemental semiconductors; passive networks; silicon; 3D capacitors; DC-DC converter applications; DRIE; capacitance density; equivalent series resistance; microfabrication techniques; passive components; silicon; Capacitance; Capacitors; DC-DC power converters; Etching; Frequency; Impedance; Paramagnetic resonance; Passive filters; Prototypes; Silicon; DC-DC power converter; Deep Reactive Ion Etching; Schottky contact; integrated capacitor; phosphorus diffusion; trench;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications, 2007 European Conference on

Conference_Location

Aalborg

Print_ISBN

978-92-75815-10-8

Electronic_ISBN

978-92-75815-10-8

Type

conf

DOI

10.1109/EPE.2007.4417614

Filename

4417614