• DocumentCode
    2585123
  • Title

    Key technologies and research development of CMOS image sensors

  • Author

    Luo, Bin ; Yang, Fuxing ; Yan, Lei

  • Author_Institution
    Beijing Univ. of Posts & Telecommun., Beijing, China
  • Volume
    1
  • fYear
    2010
  • fDate
    28-31 Aug. 2010
  • Firstpage
    322
  • Lastpage
    325
  • Abstract
    CMOS sensor has achieved monolithic imaging, the photoelectric imaging circuit of CMOS image sensor is integrated on a chip, this is an effective method of reducing the size and power consumption of the imaging system. With the development of manufacture technology, we have resolved the two bottleneck problem: sensor structure and sensor noise, which restricts the image quality of CMOS image sensor, and the image quality of CMOS sensor is close to or even reach the level of CCD sensor, so some CMOS image sensors are applied in certain high resolution imaging fields, especially we are all developing small satellite technology now, CMOS image sensor is ideal for space and remote sensing imaging, which requires the smaller system size, lower system power and lighter system weight, so CMOS image sensor has a very broad application prospects.
  • Keywords
    CMOS image sensors; low-power electronics; monolithic integrated circuits; remote sensing; research and development; CMOS image sensor; high resolution imaging; image quality; monolithic imaging; photoelectric imaging circuit; power consumption; remote sensing imaging; research and development; CMOS image sensors; CMOS integrated circuits; Charge coupled devices; Noise; Pixel; Power demand; CMOS; Exmor R CMOS; noise; remote sensing imaging;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Geoscience and Remote Sensing (IITA-GRS), 2010 Second IITA International Conference on
  • Conference_Location
    Qingdao
  • Print_ISBN
    978-1-4244-8514-7
  • Type

    conf

  • DOI
    10.1109/IITA-GRS.2010.5602944
  • Filename
    5602944