DocumentCode
2585123
Title
Key technologies and research development of CMOS image sensors
Author
Luo, Bin ; Yang, Fuxing ; Yan, Lei
Author_Institution
Beijing Univ. of Posts & Telecommun., Beijing, China
Volume
1
fYear
2010
fDate
28-31 Aug. 2010
Firstpage
322
Lastpage
325
Abstract
CMOS sensor has achieved monolithic imaging, the photoelectric imaging circuit of CMOS image sensor is integrated on a chip, this is an effective method of reducing the size and power consumption of the imaging system. With the development of manufacture technology, we have resolved the two bottleneck problem: sensor structure and sensor noise, which restricts the image quality of CMOS image sensor, and the image quality of CMOS sensor is close to or even reach the level of CCD sensor, so some CMOS image sensors are applied in certain high resolution imaging fields, especially we are all developing small satellite technology now, CMOS image sensor is ideal for space and remote sensing imaging, which requires the smaller system size, lower system power and lighter system weight, so CMOS image sensor has a very broad application prospects.
Keywords
CMOS image sensors; low-power electronics; monolithic integrated circuits; remote sensing; research and development; CMOS image sensor; high resolution imaging; image quality; monolithic imaging; photoelectric imaging circuit; power consumption; remote sensing imaging; research and development; CMOS image sensors; CMOS integrated circuits; Charge coupled devices; Noise; Pixel; Power demand; CMOS; Exmor R CMOS; noise; remote sensing imaging;
fLanguage
English
Publisher
ieee
Conference_Titel
Geoscience and Remote Sensing (IITA-GRS), 2010 Second IITA International Conference on
Conference_Location
Qingdao
Print_ISBN
978-1-4244-8514-7
Type
conf
DOI
10.1109/IITA-GRS.2010.5602944
Filename
5602944
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