DocumentCode
2585922
Title
Integrated Schottky Structures for Applications Above 100 GHz
Author
Alderman, Byron ; Sanghera, Hosh ; Thomas, Bertrand ; Matheson, David ; Maestrini, Alain ; Wang, Hui ; Treuttel, Jeanne ; Siles, Jose V. ; Davies, Steve ; Narhi, Tapani
Author_Institution
Rutherford Appleton Lab., Chilton
fYear
2008
fDate
27-28 Oct. 2008
Firstpage
202
Lastpage
205
Abstract
Recent developments in the fabrication of GaAs integrated Schottky structures for applications above 100 GHz are presented. Two approaches are discussed; the fabrication of integrated circuits using a GaAs foundry service, coupled with the research based post-processing of these structures, and the fabrication of discrete and integrated Schottky structures using a bespoke research laboratory.
Keywords
III-V semiconductors; Schottky diodes; foundries; gallium arsenide; microwave integrated circuits; semiconductor technology; GaAs; bespoke research laboratory; foundry service; integrated Schottky structures; integrated circuits fabrication; Cryogenics; Fabrication; Foundries; Frequency; Gallium arsenide; Job production systems; Laboratories; Millimeter wave technology; Schottky diodes; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
Conference_Location
Amsterdam
Print_ISBN
978-2-87487-007-1
Type
conf
DOI
10.1109/EMICC.2008.4772264
Filename
4772264
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