• DocumentCode
    2586195
  • Title

    Silicon-Germanium for Phased Array Radars

  • Author

    Berg, Håkan ; Thiesies, Heiko ; Hemmendorff, Erik ; Sidiropoulos, Georgios ; Hedman, Jonas

  • Author_Institution
    Microwave & Antennas, Saab Microwave Syst., Goteborg
  • fYear
    2008
  • fDate
    27-28 Oct. 2008
  • Firstpage
    266
  • Lastpage
    269
  • Abstract
    Phase and amplitude controlling ICs realized in a low cost standard silicon process are demonstrated. The design of several ICs at S-, C- and X-band has shown that silicon germanium is a strong contender to gallium arsenide where lowest noise figure is not vital. This applies also to the T/R-modules suited for military AESA-radars. The circuits presented in this paper are manufactured by austriamicrosystems in their 0.35 mum SiGe-BiCMOS process with an fT of 70 GHz.
  • Keywords
    integrated circuits; phased array radar; silicon compounds; BiCMOS process; SiGe; T-R-modules; amplitude controlling IC; austriamicrosystems; frequency 70 GHz; military AESA-radars; phase controlling IC; phased array radars; size 0.35 mum; Circuits; Costs; Gallium arsenide; Germanium silicon alloys; Manufacturing processes; Noise figure; Phased arrays; Pulp manufacturing; Radar; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
  • Conference_Location
    Amsterdam
  • Print_ISBN
    978-2-87487-007-1
  • Type

    conf

  • DOI
    10.1109/EMICC.2008.4772280
  • Filename
    4772280
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2586195