Using X-parameters to model diode-based RF power probes

This paper presents a X parameter model for diode power probes that can be used for calibration purposes. It will be shown that X parameters can be applied to diode power probes with significant gains in terms of behavior characterization. This first tentative to apply X parameters is a step further in the calibration of power probes, when they are excited by modulated signals. Diode power probes are normally calibrated using a simple one-tone average power as the calibration quantity, but it was proved that this type of calibration can create measurement errors when the excitation is different from a pure sinusoid. The use of more robust models to describe the power probe is thus an important point when calibrating it for operation with modulated signals.