DocumentCode
2587118
Title
MPI and Non-MPI Simulations for Epitaxial Surface Growth
Author
Navarrete, Carmen B. ; Holgado, Susana ; Anguiano, Eloy
Author_Institution
Dept. Ingenieria Informatica, Univ. Autonoma de Madrid
fYear
2006
fDate
13-17 Sept. 2006
Firstpage
444
Lastpage
447
Abstract
Usually, theories of surface growth are based on the study of global processes without taking in account the local behaviour of atoms. We have implemented two Monte-Carlo simulations. In this work we present these two simulations. Both makes use of local principles of thermodynamic for atomic deposition, relaxation and diffusion of a growing surface, and are based on a simple model that allows us to simulate the growing process of a surface of a certain material. The first one is a quasi-static model whereas the second recreates the atomic interaction. The obtained results agree with those that use global theories and with experimental results of scanning tunneling microscopy (STM)
Keywords
Monte Carlo methods; diffusion; epitaxial growth; message passing; parallel algorithms; physics computing; scanning tunnelling microscopy; surface morphology; thermodynamics; thin films; Monte-Carlo simulation; atomic deposition; atomic interaction; epitaxial surface growth; nonMPI simulation; quasistatic model; scanning tunneling microscopy; surface diffusion; thermodynamics; Atomic layer deposition; Differential equations; Kinetic theory; Linux; Rough surfaces; Semiconductor process modeling; Surface morphology; Surface roughness; Temperature; Thermodynamics;
fLanguage
English
Publisher
ieee
Conference_Titel
Parallel Computing in Electrical Engineering, 2006. PAR ELEC 2006. International Symposium on
Conference_Location
Bialystok
Print_ISBN
0-7695-2554-7
Type
conf
DOI
10.1109/PARELEC.2006.53
Filename
1698702
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