A 104μW EMI-resisting bandgap voltage reference achieving −20dB PSRR, and 5% DC shift under a 4dBm EMI level

Author

Shiheng Yang ; Pui-In Mak ; Martins, Rui P.

Author_Institution

State Key Lab. of Analog & Mixed-Signal VLSI & Fac. of Sci. & Technol. (ECE), Univ. of Macau, Macao, China

fYear

2014

fDate

17-20 Nov. 2014

Firstpage

57

Lastpage

60

Abstract

This paper describes an electromagnetic interference (EMI)-resisting Bandgap voltage reference. Its basic topology is a Kuijk Bandgap with a PMOS pass device and an active load, improved to generate a low voltage output (441.3mV) via substituting BJT by MOSFET while preserving a low temperature coefficient (TC). A double differential pair and a power-supply independent bias jointly enhance the EMI resisting ability. Simulated in 65nm CMOS, the achieved PSRR is -20dB, TC is 10.65 ppm/°C and DC shift is 5% up to a 4dBm EMI level. The total power consumption is 104μW.

Keywords

CMOS integrated circuits; electromagnetic interference; energy gap; integrated circuit design; integrated circuit noise; network topology; reference circuits; BJT; CMOS; DC shift; EMI; Kuijk bandgap; MOSFET; PMOS pass device; PSRR; bandgap voltage reference; double differential pair; electromagnetic interference; low temperature coefficient; power 104 muW; power-supply independent bias; size 65 nm; voltage 441.3 mV; CMOS integrated circuits; Electromagnetic interference; Logic gates; MOSFET; Photonic band gap; Power demand; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (APCCAS), 2014 IEEE Asia Pacific Conference on

Conference_Location

Ishigaki

Type

conf

DOI

10.1109/APCCAS.2014.7032718

Filename

7032718