Self-aligned top and bottom metal double gate low temperature poly-Si TFT fabricated at 550/spl deg/C on non-alkali glass substrate by using DPSS CW laser lateral crystallization method

Author

Hara, A. ; Takei, M. ; Yoshino, K. ; Takeuchi, F. ; Chida, M. ; Sasaki, N.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

2003

fDate

8-10 Dec. 2003

Abstract

Self-aligned top and bottom metal double gate (SAMDG) low-temperature polycrystalline silicon (poly-Si) thin film transistors (TFTs) were fabricated at 550/spl deg/C using the diode pumped solid state (DPSS) CW laser lateral crystallization (CLC) method, on non-alkali glass. The current drivability of these TFTs is eight or nine times as large as that of conventional excimer laser crystallized (ELC) poly-Si TFTs. It was confirmed that the extreme high performance of SAMDG CLC poly-Si TFT was maintained for gate length of 2.0 /spl mu/m.

Keywords

crystallisation; elemental semiconductors; laser materials processing; silicon; thin film transistors; 2.0 micron; 550 degC; CLC; DPSS CW laser lateral crystallization; SAMDG; Si; current drive; diode pumped solid state CW laser; double gate low temperature TFT; gate length; nonalkali glass substrate; poly-Si TFT; polycrystalline silicon thin film transistors; self-aligned top/bottom metal TFT; Crystallization; Diodes; Glass; Laser excitation; Pump lasers; Silicon; Solid state circuits; Substrates; Temperature; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269246

Filename

1269246